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STP4803 データシート (PDF) - Stanson Technology

部品番号	STP4803

部品情報	STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

ファイルサイズ	697.15 Kbytes

Html View	1 2 3 4 5 6 7

メーカー	STANSON [Stanson Technology]

ホームページ	http://www.stansontech.com

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STP4803 データシート (PDF) - Stanson Technology

同様の部品番号 - STP4803

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STP400N4F6	181Kb / 11P	N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages 13-Aug-2012
Inchange Semiconductor ...	STP400N4F6	372Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STP40N03L	984Kb / 7P	N-Channel 30-V (D-S) MOSFET
STMicroelectronics	STP40N03L-20	65Kb / 7P	N - CHANNEL ENHANCEMENT MODE U"LTRA HIGH DENSITY” POWER MOS TRANSISTOR Mar-1996
VBsemi Electronics Co.,...	STP40N03L-20	984Kb / 7P	N-Channel 30-V (D-S) MOSFET

同様の説明 - STP4803

メーカー	部品番号	データシート	部品情報
Stanson Technology	ST2315SRG	218Kb / 6P	ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST2341A	582Kb / 6P	ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3401SRG	212Kb / 6P	ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
	ST3407SRG	184Kb / 6P	ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4435A	311Kb / 6P	STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP4925	577Kb / 6P	STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP6621	452Kb / 6P	STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP7401	461Kb / 6P	STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP9437	375Kb / 6P	STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STP9527	927Kb / 7P	STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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