データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

STP4803 データシート(PDF) 1 Page - Stanson Technology

部品番号 STP4803
部品情報  STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  STANSON [Stanson Technology]
ホームページ  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP4803 データシート(HTML) 1 Page - Stanson Technology

  STP4803 Datasheet HTML 1Page - Stanson Technology STP4803 Datasheet HTML 2Page - Stanson Technology STP4803 Datasheet HTML 3Page - Stanson Technology STP4803 Datasheet HTML 4Page - Stanson Technology STP4803 Datasheet HTML 5Page - Stanson Technology STP4803 Datasheet HTML 6Page - Stanson Technology STP4803 Datasheet HTML 7Page - Stanson Technology  
Zoom Inzoom in Zoom Outzoom out
 1 / 7 page
background image
STP4803
STP4803
STP4803
STP4803
Dual P Channel Enhancement Mode MOSFET
-
5.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
STP4803 is the dual P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
PIN
PIN
PIN
PIN CONFIGURATION
CONFIGURATION
CONFIGURATION
CONFIGURATION
SOP-8
SOP-8
SOP-8
SOP-8
PART
PART
PART
PART MARKING
MARKING
MARKING
MARKING
SOP-8
SOP-8
SOP-8
SOP-8
ORDERING
ORDERING
ORDERING
ORDERING INFORMATION
INFORMATION
INFORMATION
INFORMATION
※ Process Code : A ~ Z ; a ~ z
Part
Part
Part
Part Number
Number
Number
Number
Package
Package
Package
Package
Part
Part
Part
Part Marking
Marking
Marking
Marking
STP4803
SOP-8
STP4803
FEATURE
FEATURE
FEATURE
FEATURE
-30V/-5.2A, R
DS(ON) = 38mΩ (Typ.)
@VGS =-10V
-30V/-4.0A, RDS(ON) = 52mΩ
@VGS = -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design


同様の部品番号 - STP4803

メーカー部品番号データシート部品情報
logo
STMicroelectronics
STP400N4F6 STMICROELECTRONICS-STP400N4F6 Datasheet
181Kb / 11P
N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages
13-Aug-2012
logo
Inchange Semiconductor ...
STP400N4F6 ISC-STP400N4F6 Datasheet
372Kb / 2P
isc N-Channel MOSFET Transistor
logo
VBsemi Electronics Co.,...
STP40N03L VBSEMI-STP40N03L Datasheet
984Kb / 7P
N-Channel 30-V (D-S) MOSFET
logo
STMicroelectronics
STP40N03L-20 STMICROELECTRONICS-STP40N03L-20 Datasheet
65Kb / 7P
N - CHANNEL ENHANCEMENT MODE U"LTRA HIGH DENSITY” POWER MOS TRANSISTOR
Mar-1996
logo
VBsemi Electronics Co.,...
STP40N03L-20 VBSEMI-STP40N03L-20 Datasheet
984Kb / 7P
N-Channel 30-V (D-S) MOSFET
More results

同様の説明 - STP4803

メーカー部品番号データシート部品情報
logo
Stanson Technology
ST2315SRG STANSON-ST2315SRG Datasheet
218Kb / 6P
ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2341A STANSON-ST2341A Datasheet
582Kb / 6P
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3401SRG STANSON-ST3401SRG Datasheet
212Kb / 6P
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
ST3407SRG STANSON-ST3407SRG Datasheet
184Kb / 6P
ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4435A STANSON-STP4435A Datasheet
311Kb / 6P
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP4925 STANSON-STP4925 Datasheet
577Kb / 6P
STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP6621 STANSON-STP6621 Datasheet
452Kb / 6P
STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP7401 STANSON-STP7401 Datasheet
461Kb / 6P
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP9437 STANSON-STP9437 Datasheet
375Kb / 6P
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP9527 STANSON-STP9527 Datasheet
927Kb / 7P
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
More results


Html Pages

1 2 3 4 5 6 7


データシート ダウンロード

Go To PDF Page


リンク URL



ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   データシートへのリンク    |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com