K6R1016V1C-C/C-L, K6R1016V1C-I/C-P

CMOS SRAM

Revision 3.3

- 1 -

October 2000

for AT&T

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev.No.

Rev. 0.0

Rev. 1.0

Rev. 2.0

Rev. 2.1

Rev. 2.2

Rev. 3.0

Rev. 3.1

Rev. 3.2

Rev. 3.3

Remark

Preliminary

Final

Final

Final

Final

Final

Final

Final

Final

History

Initial release with Preliminary.

Release to Final Data Sheet.

1.1. Delete Preliminary.

1.2. Changed DC characteristics.

Added 48-fine pitch BGA.

Changed device part name for FP-BGA.

ex) K6R1016V1C-Z -> K6R1016V1C-F

Changed device ball name for FP-BGA.

1. Added 10ns speed for FP-BGA only.

2. Changed Standby Current.

3. Added Data Retention Characteristics.

Added 10ns speed for all packages(44SOJ / 44TSOP2 / 48FPBGA)

Supply Voltage Change

1. Only 10ns Bin : 3.15V ~ 3.6V

2. The Rest Bin : 3.0V ~ 3.6V

Item

Previous

Changed

12ns

85mA

95mA

15ns

83mA

93mA

20ns

80mA

90mA

Item

Previous

Changed

Symbol

Z

F

Previous

Changed

I/O1 ~ I/O8

I/O9 ~ I/O16

I/O9 ~ I/O16

I/O1 ~ I/O8

Item

Previous

Changed

Standby Current(Isb1)

0.3mA

0.5mA

Item

Previous

Changed

Min

Max

Min

Max

2.0

2.0

-0.5

0.8

-0.3

0.8

Draft Data

Aug. 5. 1998

Sep. 7. 1998

Sep. 17. 1998

Nov. 5. 1998

Dec. 10. 1998

Mar. 2. 1999

Apr. 24. 2000

Aug. 25. 2000

Oct. 2. 2000