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LTE-R38386AS-S データシート(PDF) 3 Page - Lite-On Technology Corporation |
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LTE-R38386AS-S データシート(HTML) 3 Page - Lite-On Technology Corporation |
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3 / 8 page ![]() 2/7 Part No. : LTE-R38386AS-S BNS-OD-FC 002/A4 IR Emitter and Detector LTE-R38386AS-S 3. Absolute Maximum Ratings at TA=25°C Parameter Maximum Rating Unit Power Dissipation 3.6 W Peak Forward Current (300pps, 10μs pulse) 5 A DC Forward Current 1 A Reverse Voltage 5 V Thermal Resistance Junction 9 K/W Operating Temperature Range -40°C to + 85°C Storage Temperature Range -55°C to + 100°C Infrared Soldering Condition 260°C for 10 Seconds Max. 4. Electrical / Optical Characteristics at TA=25°C Parameter Symbol Min. Typ. Max. Unit Test Condition Radiant Intensity IE 400 630 - mW/sr IF = 1A Total Radiant Flux Фe - 1340 - mW IF = 1A Peak Emission Wavelength λPeak - 850 - nm IF = 1A Spectral Line Half-Width Δλ - 50 - nm IF = 1A Forward Voltage VF 2.5 3.1 3.6 V IF = 1A Reverse Current IR - - 10 μA VR = 5V Rise/Fall Time Tr/Tf - 30 - ns 10%~90% Viewing Angle 2θ1/2 - 90 - deg NOTE: 1 . θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. 2 . The dominant wavelength, λd is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device. |
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