AP6A100M datasheet(3/6 Pages) A-POWER

部品番号	AP6A100M

部品情報	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	6 Pages

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メーカー	A-POWER [Advanced Power Electronics Corp.]

ホームページ	http://www.a-power.com.tw

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AP6A100M

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode

Junction Temperature

V DS , Drain-to-Source Voltage (V)

T A =25

o C

10V

7.0V

6.0V

5.0V

V G = 4.0V

V DS , Drain-to-Source Voltage (V)

10V

7.0V

6.0V

5.0V

V G = 4.0V

T A = 150

o C

246

V GS , Gate-to-Source Voltage (V)

I D =2A

T A =25

o C

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-100

-50

100

150

T j , Junction Temperature (

o C)

I D =3 A

V G =10V

0.2

0.4

0.6

0.8

1.2

1.4

V SD , Source-to-Drain Voltage (V)

T j =25

o C

T j =150

o C

0.0

0.4

0.8

1.2

1.6

2.0

-100

-50

100

150

T j , Junction Temperature (

o C)

I D =1mA

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