Advanced Power

DUAL N-CHANNEL ENHANCEMENT

Electronics Corp.

MODE POWER MOSFET

▼ Simple Drive Requirement

60V

▼ Small Package Outline

100mΩ

▼ Surface Mount Device

3

3.3A

▼ RoHS Compliant & Halogen-Free

Description

Symbol

Units

V

V

A

A

A

W

℃

℃

Symbol

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

3

62.5

℃/W

Data and specifications subject to change without notice

Thermal Data

Parameter

Storage Temperature Range

Total Power Dissipation

2

-55 to 150

Operating Junction Temperature Range

-55 to 150

3

2.7

Pulsed Drain Current

1

20

Gate-Source Voltage

+20

3

3.3

Parameter

Rating

Drain-Source Voltage

60

201611221

1

AP6A100M

Halogen-Free Product

AP6A100 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide range

of power applications.

The SO-8 package is widely preferred for all commercial-

industrial surface mount applications using infrared reflow

technique

and

suited

for

voltage

conversion

or

switch

applications.

S1

G1

S2

G2

D1

D1

D2

D2

SO-8

G2

D2

S2

G1

D1

S1

.