ACE14201B datasheet(2/6 Pages) ACE

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ACE14201B

P-Channel Enhancement Mode Power MOSFET

VER 1.1

Ordering information

ACE14201B XX + H

Electrical Characteristics TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

V(BR)DSS

VGS=0V, ID=-250µA

-20

Zero gate voltage drain current

IDSS

VDS=-16V, VGS=0V

µA

Gate threshold voltage

VGS(th)

VGS=VDS, IDS=-250µA

-0.4

-0.6

-1.0

Gate leakage current

IGSS

VGS=±12V, VDS=0V

±100

Drain-source on-state resistance

RDS(ON)

VGS=-4.5V, ID=-20A

5.8

mΩ

VGS=-2.5V, ID=-20A

7.2

VGS=-1.8V, ID=-20A

Forward trans conductance

gFS

VDS=-5V, ID=-20A

Diode forward voltage

VSD

ISD=-20A, VGS=0V

1.2

Diode Forward Current

-45

Switching

Total gate charge

VGS=-4.5V, VDS=-10V, ID=-20A

Gate-source charge

Qgs

Gate-drain charge

Qgd

Turn-on delay time

td(on)

VGS=-4.5V,VDD=-10V,

RL=0.5

Ω,R

GEN = 3

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Dynamic

Input capacitance

Ciss

VGS=0V, VDS=-10V, f=1.0MHz

3500

Output capacitance

Coss

577

Reverse transfer capacitance

Crss

445

NN: DFN3*3-8L

Pb - free

Halogen - free

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