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ACE14201B データシート(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE14201B データシート(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page ![]() ACE14201B P-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description The ACE14201B uses advanced trench technology and desgin to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS (V) =-20V , ID = -45A RDS(ON) @VGS = -4.5V , TYP 5.8m Ω RDS(ON) @VGS = -2.5V , TYP 7.2m Ω RDS(ON) @VGS = -1.8V , TYP 9m Ω Absolute Maximum Ratings @T A=25℃ unless otherwise noted Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Drain Current (Continuous)*AC TA=25℃ ID -45 A TA=100℃ -35 Drain Current (Pulsed)*B IDM -200 A Power Dissipation TA=25℃ PD 80 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ A: The value of RθJAis measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type DFN3*3-8L |
同様の部品番号 - ACE14201B |
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同様の説明 - ACE14201B |
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