 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
AM652X データシート(PDF) 123 Page - Texas Instruments |
|
|
|||||||||||||||||||||||||||||
AM652X データシート(HTML) 123 Page - Texas Instruments |
|
|
123 / 299 page  123 AM6548, AM6528, AM6546 AM6526, AM6527 www.ti.com SPRSP08E – NOVEMBER 2017 – REVISED OCTOBER 2018 Submit Documentation Feedback Product Folder Links: AM6548 AM6528 AM6546 AM6526 AM6527 Specifications Copyright © 2017–2018, Texas Instruments Incorporated Table 5-4. Analog OSC Buffers DC Electrical Characteristics over recommended operating conditions (unless otherwise noted) PARAMETER MIN TYP MAX UNIT 1.8-V MODE High Frequency Oscillator BALL NAMES in Mode 0: WKUP_OSC0_XI / WKUP_OSC0_XO / OSC1_XI / OSC1_XO BALL NUMBERS: C22 / E22 / AD5 / AE6 VIH Input high-level threshold 0.65 × VDDS V VIL Input low-level threshold 0.35 × VDDS V COSC Crystal Shunt capacitance 4 pF CLC Load Capacitance 12 24 pF TDC Output duty cycle on core port 40 50 60 % 1.8-V MODE Low Frequency Oscillator BALL NAMES in Mode 0: WKUP_LFOSC0_XI, WKUP_LFOSC0_XO BALL NUMBERS: AC4 / AE4 VIH Input high-level threshold 0.65 × VDDS V VIL Input low-level threshold 0.35 × VDDS V COSC Crystal Shunt capacitance 1.35 pF CLC Load Capacitance 12 24 µF TDC Output duty cycle on core port 45 50 55 % (1) VDDS in this table stands for corresponding power supply. For more information on the power supply name and the corresponding ball, see Table 4-1, POWER [9] column. Table 5-5. UHS-I MMC (8bit PHY) Buffers DC Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER MIN NOM MAX UNIT BALL NAMES in Mode 0: MMC0_CLK / MMC0_CMD / MMC0_DS / MMC0_DAT[7:0] / MMC1_CLK / MMC1_CMD / MMC1_DAT[3:0] / MMC0_CALPAD / MMC1_CALPAD BALL NUMBERS: A24 / A25 / A26 / B25 / B26 / B27 / C25 / C26 / C27 / C28 / D24 / D25 / D26 / D27 / D28 / E24 / E25 / E27 / F23 1.8-V Mode VIH Input high-level voltage 0.65 × VDDS VDDS VDDS+0.3 V VIL Input low-level voltage VDDS-0.3 VSSQ 0.35 × VDDS V VHYS Input hysteresis voltage 50 mV IIN Input current at each I/O pin 30 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 30 µA IIN with pulldown enabled Input current at each I/O pin with weak pulldown enabled measured when PAD = VDDS 50 120 210 µA IIN with pullup enabled Input current at each I/O pin with weak pullup enabled measured when PAD = 0 60 120 200 µA CPAD Pad capacitance (including package capacitance) 5 pF VOH Output high-level threshold (IOH = 2 mA) 0.75 × VDDS V VOL Output low-level threshold (IOL = 2 mA) 0.125 × VDDS V |
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか？ [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Japanese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
