FIR4525DG datasheet(1/9 Pages) FOSTER

部品番号	FIR4525DG

部品情報	N and P-Channel Enhancement Mode Power MOSFET

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メーカー	FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]

ホームページ	http://www.first-semi.com

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Apr,

Apr, 2012-Ver4.5

2012-Ver4.5

0

01

1

FIR4525DG

N and P-Channel Enhancement Mode Power MOSFET

Description

The FIR4525DG uses advanced trench technology to provide

excellent RDS(ON) and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

● N-Channel

VDS = 40V,ID =7A

RDS(ON) < 24mΩ @ VGS=10V

RDS(ON) < 38mΩ @ VGS=4.5V

● P-Channel

VDS = -40V,ID = -5A

RDS(ON) < 38mΩ @ VGS=-10V

RDS(ON) <50mΩ @ VGS=-4.5V

●

High power and current handing capability

●

Lead free product is acquired

●

Surface mount package

Schematic diagram

Marking and pin assignment

SOP-8

top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

FIR4525D

FIR4525DG

SOP-8

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

40

-40

V

Gate-Source Voltage

VGS

±10

V

TA=25℃

7

-5

Continuous Drain Current

TA=70℃

ID

5.8

-4.2

A

Pulsed Drain Current

(Note 1)

IDM

30

-30

A

Maximum Power Dissipation

TA=25℃

PD

2.0

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

N-channel

P-channel

REV:1.0

Page 1/9

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