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FIR4525DG データシート(PDF) 2 Page - Shenzhen Foster Semiconductor Co., Ltd.

部品番号 FIR4525DG
部品情報  N and P-Channel Enhancement Mode Power MOSFET
PDF  9 Pages
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メーカー  FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]
ホームページ  http://www.first-semi.com
Logo FOSTER - Shenzhen Foster Semiconductor Co., Ltd.

FIR4525DG データシート(HTML) 2 Page - Shenzhen Foster Semiconductor Co., Ltd.

  FIR4525DG Datasheet HTML 1Page - Shenzhen Foster Semiconductor Co., Ltd. FIR4525DG Datasheet HTML 2Page - Shenzhen Foster Semiconductor Co., Ltd. FIR4525DG Datasheet HTML 3Page - Shenzhen Foster Semiconductor Co., Ltd. FIR4525DG Datasheet HTML 4Page - Shenzhen Foster Semiconductor Co., Ltd. FIR4525DG Datasheet HTML 5Page - Shenzhen Foster Semiconductor Co., Ltd. FIR4525DG Datasheet HTML 6Page - Shenzhen Foster Semiconductor Co., Ltd. FIR4525DG Datasheet HTML 7Page - Shenzhen Foster Semiconductor Co., Ltd. FIR4525DG Datasheet HTML 8Page - Shenzhen Foster Semiconductor Co., Ltd. FIR4525DG Datasheet HTML 9Page - Shenzhen Foster Semiconductor Co., Ltd.  
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Apr,
Apr,
Apr,
Apr, 2012-Ver4.5
2012-Ver4.5
2012-Ver4.5
2012-Ver4.5
0
0
0
02
2
2
2
FIR4525DG
Thermal Resistance,Junction-to-Ambient
(Note2)
RθJA
N-Ch
62.5
/W
℃
Thermal Resistance,Junction-to-Ambient
(Note2)
RθJA
P-Ch
62.5
/W
℃
N-CH Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
40
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=40V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
-
-
±10
μA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1
1.5
2
V
VGS=10V, ID=6A
-
19.5
24
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=5A
-
29
38
mΩ
Forward Transconductance
gFS
VDS=5V,ID=6A
15
-
-
S
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
-
516
-
PF
Output Capacitance
Coss
-
82
-
PF
Reverse Transfer Capacitance
Crss
VDS=20V,VGS=0V,
F=1.0MHz
-
42
-
PF
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
-
4.5
-
nS
Turn-on Rise Time
tr
-
2.5
-
nS
Turn-Off Delay Time
td(off)
-
14.5
-
nS
Turn-Off Fall Time
tf
VDD=15V, RL=2.5Ω
VGS=10V,RGEN=3Ω
-
3.5
-
nS
Total Gate Charge
Qg
-
8.9
-
nC
Gate-Source Charge
Qgs
-
2.4
-
nC
Gate-Drain Charge
Qgd
VDS=20V,ID=6A,
VGS=10V
-
1.4
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=6A
-
0.8
1.2
V
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