EMB55A03G datasheet(4/5 Pages) EXCELLIANCE

部品番号	EMB55A03G

部品情報	Dual N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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メーカー	EXCELLIANCE [Excelliance MOS Corp.]

ホームページ	http://www.excelliancemos.com/

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4 / 5 page

2013/8/30

p.4

EMB55A03G

0.8

1.2

1.5

1.4

0.7

-50

-25

100

125

150

TJ, Junction Temperature(°C)

= 4.5A

VGS= 10V

On‐Resistance Variation with Temperature

0.9

1.1

1.3

0.01

0.001

0.0001

00.2

0.4

0.6

0.8

1.2

VSD, Body Diode Forward Voltage( V )

Body Diode Forward Voltage Variation with

Source Current and Temperature

VGS= 0V

TJ= 125°C

25°C

-55°C

0.1

100

VGS= 10V

6.0V

4.5V

VDS, Drain‐Source Voltage( V )

On‐Region Characteristics

2.0

1.8

1.6

1.4

1.2

1.0

0.8

VGS= 4.5V

5.0V

6.0V

7.0V

10V

ID, Drain Current( A )

On‐Resistance Variation with

Drain Current and Gate Voltage

0.25

0.20

0.10

0.15

0.05

2.5

7.5

VGS, Gate‐Source Voltage( V )

On‐Resistance Variation with Gate‐Source Voltage

ID=3A

TA= 125°C

TA= 25°C

VGS, Gate‐Source Voltage( V )

VDS= 5V

TA= -55°C

125°C

25°C

Transfer Characteristics

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