EMB55A03G datasheet(1/5 Pages) EXCELLIANCE

部品番号	EMB55A03G

部品情報	Dual N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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メーカー	EXCELLIANCE [Excelliance MOS Corp.]

ホームページ	http://www.excelliancemos.com/

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2013/8/30

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EMB55A03G

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

30V

RDSON (MAX.)

55mΩ

ID

4.5A

UIS, 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±20

V

Continuous Drain Current

TA = 25 °C

ID

4.5

A

TA = 70 °C

3.3

Pulsed Drain Current

1

IDM

18

Avalanche Current

IAS

4.5

Avalanche Energy

L = 0.1mH, ID=4.5A, RG=25Ω

EAS

1

mJ

Repetitive Avalanche Energy

2

L = 0.05mH

EAR

0.5

Power Dissipation

TA = 25 °C

PD

2

W

TA = 70 °C

1.3

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

RJC

25

°C / W

Junction‐to‐Ambient

3

RJA

62.5

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.

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