WNM3003 datasheet(3/7 Pages) WILLSEMI

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WNM3003

Electronics Characteristics (Ta=25

oC, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250uA

Zero Gate Voltage Drain Current

IDSS

VDS =24 V, VGS

Gate-to-source Leakage Current

IGSS

VDS = 0 V, VGS = ±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250uA

1.0

1.6

3.0

VGS = 10V, ID = 3.1A

VGS = 10V, ID = 2.5A

Drain-to-source On-resistance

RDS(on)

VGS = 4.5V, ID = 2.0A

Forward Transconductance

gFS

VDS = 4.5V, ID = 2.8A

5.8

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

570

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VGS = 0 V, f = 1.0 MHz, VDS =

15 V

Total Gate Charge

QG(TOT)

11.6

Threshold Gate Charge

QG(TH)

0.8

Gate-to-Source Charge

QGS

1.25

Gate-to-Drain Charge

QGD

VGS =10 V, VDS =15 V,

ID = 3.1A

3.0

SWITCHING CHARACTERISTICS

Turn-On Delay Time

td(ON)

Rise Time

3.3

Turn-Off Delay Time

td(OFF)

Fall Time

VGS = 10 V, VDS = 15 V,

ID=1A, RG=6

4.4

BODY DIODE CHARACTERISTICS

Forward Voltage

VSD

VGS = 0 V, IS = 1.5A

0.50

0.84

1.50

Will Semiconductor Ltd.

2011 - Rev.1.1

= 0V

Dec,

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