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WNM3003 データシート(PDF) 1 Page - Will Semiconductor Ltd. |
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WNM3003 データシート(HTML) 1 Page - Will Semiconductor Ltd. |
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1 / 7 page ![]() WNM3003 WNM3003 N-Channel, 30V, 4.0A, Power MOSFET Descriptions The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM3003 is Pb-free. Features Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 Applications Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging Http://www.willsemi.com SOT-23 Configuration (Top View) WT3* WT3 = Device Code * = Month (A~Z) Marking Order Information Device Package Shipping WNM3003-3/TR SOT-23 3000/Tape&Reel D 3 2 S 1 G V(BR)DSS Rds(on) ( ) 0.033@ 10V 0.033@ 10V 30V 0.043 @ 4.5V Will Semiconductor Ltd. 1 2011 - Rev.1.1 Dec, |
同様の部品番号 - WNM3003 |
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同様の説明 - WNM3003 |
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