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GD25LD80CSFG データシート(PDF) 29 Page - GigaDevice Semiconductor (Beijing) Inc.

部品番号 GD25LD80CSFG
部品情報  1.8V Uniform Sector Standard and Dual Serial Flash
PDF  42 Pages
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メーカー  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
ホームページ  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25LD80CSFG データシート(HTML) 29 Page - GigaDevice Semiconductor (Beijing) Inc.

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1.8V Uniform Sector
Standard and Dual Serial Flash
GD25LD80C
29
(T= -40℃~105℃, VCC=1.65~2.0V, CL=30pf)
Symbol
Parameter
Min.
Typ.
Max.
Unit.
fC
Serial Clock Frequency For: Fast read (0BH)
50
MHz
fR
Serial Clock Frequency For: Read (03H), Dual Output (3BH)
40
MHz
tCLH
Serial Clock High Time
8
ns
tCLL
Serial Clock Low Time
8
ns
tCLCH
Serial Clock Rise Time (Slew Rate)
0.1
V/ns
tCHCL
Serial Clock Fall Time (Slew Rate)
0.1
V/ns
tSLCH
CS# Active Setup Time
10
ns
tCHSH
CS# Active Hold Time
10
ns
tSHCH
CS# Not Active Setup Time
10
ns
tCHSL
CS# Not Active Hold Time
10
ns
tSHSL
CS# High Time (Read/Write)
40
ns
tSHQZ
Output Disable Time
12
ns
tCLQX
Output Hold Time
0
ns
tDVCH
Data In Setup Time
4
ns
tCHDX
Data In Hold Time
4
ns
tCLQV
Clock Low To Output Valid
12
ns
tWHSL
Write Protect Setup Time Before CS# Low
20
ns
tSHWL
Write Protect Hold Time After CS# High
100
ns
tDP
CS# High To Deep Power-Down Mode
0.1
μs
tRES1
CS# High To Standby Mode Without Electronic Signature
Read
0.1
μs
tRES2
CS# High To Standby Mode With Electronic Signature Read
0.1
μs
tW
Write Status Register Cycle Time
5
40
ms
tBP1
Byte Program Time(First Byte)
40
120
μs
tBP2
Addition Byte Program Time(After First Byte)
5
15
μs
tPP
Page Programming Time
1.6
7
ms
tSE
Sector Erase Time
150
600
ms
tBE1
Block Erase Time (32K Bytes)
0.5
3.5
s
tBE2
Block Erase Time (64K Bytes)
0.8
5
s
tCE
Chip Erase Time (GD25LD80C)
12
50
s
Note:
1. Typical values given for TA=25°C VCC = 1.8V.
2. Value guaranteed by design and/or characterization, not 100% tested in production.



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