GD25LE256DYJS datasheet(68/83 Pages) GIGADEVICE

部品番号	GD25LE256DYJS

部品情報	1.8V Uniform Sector Dual and Quad Serial Flash

PDF	83 Pages

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メーカー	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

ホームページ	http://www.gigadevice.com/

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68 / 83 page

1.8V Uniform Sector

Dual and Quad Serial Flash

GD25LE256D

ELECTRICAL CHARACTERISTICS

8.1. POWER-ON TIMING

Figure44. Power-on Timing

Table6. Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

Min.

Max.

Unit

tVSL

VCC (min.) to device operation

2.5

VWI

Write Inhibit Voltage

1.5

VPWD

VCC voltage needed to below VPWD for ensuring initialization will occur

0.5

tPWD

The minimum duration for ensuring initialization will occur

300

8.2. INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register

contains 00H (all Status Register bits are 0).

8.3. ABSOLUTE MAXIMUM RATINGS

Parameter

Value

Unit

Ambient Operating Temperature

-40 to 85

-40 to 105

-40 to 125

℃

Storage Temperature

-65 to 150

℃

Transient Input/Output Voltage (note: overshoot)

-2.0 to VCC+2.0

Applied Input/Output Voltage

-0.6 to VCC+0.4

VCC

-0.6 to 2.5

VCC(max.)

VCC(min.)

tVSL

Chip Selection is not allowed

Full Device

Access

Allowed

Time

VPWD(max.)

tPWD

VCC

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