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GD25VQ80C データシート(PDF) 41 Page - GigaDevice Semiconductor (Beijing) Inc.

部品番号 GD25VQ80C
部品情報  Uniform Sector Dual and Quad Serial Flash
PDF  55 Pages
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メーカー  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
ホームページ  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25VQ80C データシート(HTML) 41 Page - GigaDevice Semiconductor (Beijing) Inc.

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Uniform Sector
Dual and Quad Serial Flash
GD25VQ80C
41
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Figure 36. Power-on Timing Sequence Diagram
Vcc(max)
Vcc(min)
VWI
tVSL
Chip Selection is not allowed
Device is fully
accessible
Time
Table6. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
tVSL
VCC(min) To CS# Low
1.8
ms
VWI
Write Inhibit Voltage
1.5
2.2
V
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register
contains 00H (all Status Register bits are 0).
8.3. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
℃
Storage Temperature
-65 to 150
℃
Applied Input/Output Voltage
-0.6 to VCC+0.4
V
Transient Input / Output Voltage
-2.0 to VCC+2.0
V
VCC
-0.6 to 4.2
V



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