UMT1N datasheet(1/5 Pages) FS

部品番号	UMT1N

部品情報	Dual General Purpose Transistors

PDF	5 Pages

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メーカー	FS [First Silicon Co., Ltd]

ホームページ	http://www.firstsilicon.co.kr/

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1 / 5 page

2012. 03. 08

1/5

SEMICONDUCTOR

TECHNICAL DATA

UMT1N

Revision No : 0

1

3

2

SOT-363/SC-88

6

4

5

Q1 MAXIMUM RATING (Ta=25

)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

V CBO

-50

V

Collector-Emitter Voltage

V CEO

-45

V

Emitter-Base Voltage

V EBO

-6

Collector Current

IC

-100

Base Current

IB

-20

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector Power Dissipation

PC *

380

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 ~ 150

Q2 MAXIMUM RATING (Ta=25

)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

V CBO

-50

V

Collector-Emitter Voltage

V CEO

-45

V

Emitter-Base Voltage

V EBO

-6

Collector Current

IC

-100

Base Current

IB

-20

Q1 Q2 MAXIMUM RATING (Ta=25

)

* Total Raing. FR-5 = 1.0 x 0.75 x 0.062 in

Dual General Purpose Transistors

PNP Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–363/SC–88 which is

designed for low power surface mount applications.

Q1

Q2

(1)

(2)

(3)

(4)

(5)

(6)

DEVICE MARKING

3B

V

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