PDTC114TMB datasheet(5/12 Pages) NEXPERIA

5 / 12 page

PDTC114TMB

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 21 June 2012

4 of 11

NXP Semiconductors

PDTC114TMB

NPN resistor-equipped transistor; R1 = 10 k

Ω, R2 = open

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Characteristics

[1]

Characteristics of built-in transistor.

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

500

K/W

FR4 PCB, standard footprint

Fig 3.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aab603

10−5

10−2

10−4

102

10−1

tp (s)

10−3

103

102

103

Zth(j-a)

(K/W)

duty cycle =

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =50V; IE =0A; Tamb = 25 °C

100

ICEO

collector-emitter cut-off

current

VCE =30V; IB =0A; Tamb = 25 °C

--1

µA

VCE =30V; IB =0A; Tj = 150 °C

--5

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC =0A; Tamb = 25 °C

100

hFE

DC current gain

VCE =5V; IC =1 mA; Tamb = 25 °C

200

VCEsat

collector-emitter

saturation voltage

IC =10mA; IB = 0.5 mA; Tamb = 25 °C

150

bias resistor 1 (input)

Tamb = 25 °C

Ω

collector capacitance

VCB =10V; IE =0A; ie =0A;

f=1MHz; Tamb =25°C

--2.5

transition frequency

VCE =5V; IC = 10mA; f=100MHz;

Tamb =25°C

[1]

230

MHz

PDTC114TMB データシート(PDF) 5 Page - Nexperia B.V. All rights reserved

PDTC114TMB データシート(HTML) 5 Page - Nexperia B.V. All rights reserved

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

データシートダウンロード

リンク URL

PDTC114TMB データシート(PDF) 5 Page - Nexperia B.V. All rights reserved

PDTC114TMB データシート(HTML) 5 Page - Nexperia B.V. All rights reserved

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

データシート ダウンロード

リンク URL

データシートダウンロード