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PDTC114TMB データシート(PDF) 6 Page - Nexperia B.V. All rights reserved |
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PDTC114TMB データシート(HTML) 6 Page - Nexperia B.V. All rights reserved |
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6 / 12 page ![]() PDTC114TMB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 June 2012 5 of 11 NXP Semiconductors PDTC114TMB NPN resistor-equipped transistor; R1 = 10 k Ω, R2 = open VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C Fig 4. DC current gain as a function of collector current; typical values Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values f = 1 MHz; Tamb = 25 °C VCE = 5 V; Tamb = 25 °C Fig 6. Collector capacitance as a function of collector-base voltage; typical values of built-in transistor Fig 7. Transition frequency as a function of collector current; typical values of built-in transistor 006aaa552 200 400 600 hFE 0 IC (mA) 10−1 102 10 1 (1) (2) (3) 006aaa553 IC (mA) 10−1 102 10 1 10−1 1 VCEsat (V) 10−2 (1) (2) (3) VCB (V) 050 40 20 30 10 006aad055 1 2 3 Cc (pF) 0 006aac757 IC (mA) 10-1 102 10 1 102 103 fT (MHz) 10 |
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