PDTC115TMB

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 1 — 21 June 2012

6 of 11

NXP Semiconductors

PDTC115TMB

NPN resistor-equipped transistor; R1 = 100 k

Ω, R2 = open

8.

Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

9.

Package outline

Fig 8.

DFN1006B-3 (SOT883B)

11-11-02

Dimensions in mm

2

3

0.55

0.47

0.30

0.22

1

0.40

0.34

0.30

0.22

0.20

0.12

0.65

0.04 max

0.35

0.65

0.55

1.05

0.95