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PDTC115TMB データシート(PDF) 2 Page - Nexperia B.V. All rights reserved |
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PDTC115TMB データシート(HTML) 2 Page - Nexperia B.V. All rights reserved |
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2 / 12 page ![]() 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA115TMB. 1.2 Features and benefits 100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design AEC-Q101 qualified Leadless ultra small SMD plastic package Low package height of 0.37 mm 1.3 Applications Low-current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications 1.4 Quick reference data PDTC115TMB NPN resistor-equipped transistor; R1 = 100 k Ω, R2 = open Rev. 1 — 21 June 2012 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IO output current - - 100 mA R1 bias resistor 1 (input) Tamb = 25 °C 70 100 130 k Ω |
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