MMBT4403 datasheet(2/4 Pages) PJSEMI

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MMBT

4403

PNP Transistor

2 / 4

Electrical Characteristics at TA = 25℃

Parameter

DC Current Gain

at -VCE = 1 V, -IC = 0.1 mA

at -VCE = 1 V, -IC = 1 mA

at -VCE = 1 V, -IC = 10 mA

at -VCE = 2 V, -IC = 150 mA

at -VCE = 2 V, -IC = 500 mA

hFE

100

300

Collector Base Cutoff Current

at -VCB = 35 V

-ICBO

0.1

µA

Emitter Base Cutoff Current

at -VEB = 5 V

-IEBO

0.1

µA

Collector Base Breakdown Voltage

at -IC = 0.1 mA

-V(BR)CBO

Collector Emitter Breakdown Voltage

at -IC = 1 mA

-V(BR)CEO

Emitter Base Breakdown Voltage

at -IE = 0.1 mA

-V(BR)EBO

Collector Emitter Saturation Voltage

at -IC = 150 mA, -IB = 15 mA

at -IC = 500 mA, -IB = 50 mA

-VCE(sat)

0.4

0.75

Base Emitter Saturation Voltage

at -IC = 150 mA, -IB = 15 mA

at -IC = 500 mA, -IB = 50 mA

-VBE(sat)

0.75

0.95

1.3

Current Gain Bandwidth Product

at -VCE = 10 V, -IC = 20 mA, f = 100 MHz

200

MHz

Collector Base Capacitance

at -VCB = 10 V, f = 1 MHz

Cob

8.5

Delay Time

-VCC = 30 V, -VEB = 2 V, -IC = 150 mA, -IB1 = 15 mA

Rise Time

-VCC = 30 V, -VEB = 2 V, -IC = 150 mA, -IB1 = 15 mA

Storage Time

-VCC = 30 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA

225

Fall Time

-VCC = 30 V, -IC = 150 mA, -IB1 = -IB2 = 15 mA

Min.

Max.

Symbol

Unit

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Revision：1.1 Jan-2019

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