MMBTSC1815 datasheet(1/4 Pages) PJSEMI

部品番号	MMBTSC1815

部品情報	NPN Transistor

PDF	4 Pages

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メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

ホームページ	http://www.pingjingsemi.com/MainEn/Main.aspx

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1 / 4 page

MMBTSC1815

NPN Transistor

1 /

4

www.pingjingsemi.com

Revis

ion：1.0 Oct-2017

Features



For Switching and AF Amplifier Applications.



As Complementary Type of the PNP Transistor

MMBTSA1015 is Recommended.

Absolute Maximum Ratings

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

60

V

Collector Emitter Voltage

VCEO

50

V

Emitter Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Power Dissipation

PD

200

mW

Junction Temperature

TJ

150

℃

Storage Temperature Range

TSTG

-55 to 150

℃

SOT-23

(TO-236)

1.Base 2.Emitter 3.Collector

Marking:

MMBTSC1815O:8O

MMBTSC1815Y:8Y

MMBTSC1815G:HF

MMBTSC1815L:8L

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