MMBTSC1815 datasheet(2/4 Pages) PJSEMI

部品番号	MMBTSC1815

部品情報	NPN Transistor

PDF	4 Pages

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メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

ホームページ	http://www.pingjingsemi.com/MainEn/Main.aspx

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MMBTSC1815

NPN Transistor

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www.pingjingsemi.com

Revis

ion：1.0 Oct-2017

Electrical Characteristics

Ratings at 25

℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 6 V, IC = 2 mA

Current Gain Group

HFE

120

200

350

140

240

400

700

Collector Base Cutoff Current

at VCB = 60 V

ICBO

100

Emitter Base Cutoff Current

at VEB = 5 V

IEBO

100

Emitter Base Breakdown Voltage

at IE

= 100 μA

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 100 mA, IB = 10 mA

VCE(sat)

0.25

Base Emitter Saturation Voltage

at IC = 100 mA, IB = 10 mA

VBE(sat)

Transition Frequency

at VCE = 10 V, IC = 1 mA

, f = 30 MHz

MHz

Collector Base Capacitance

at VCB = 10 V, f = 1 MHz

Cob

Collector

Emitter Cutoff Current

at VCE =

50 V

ICEO

100

Collector Base Breakdown Voltage

at IC = 100 μA

V(BR)CBO

Collector Emitter Breakdown Voltage

at IC =

0.1 mA

V(BR)CEO

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