MMBTSC2412 datasheet(1/4 Pages) PJSEMI

部品番号	MMBTSC2412

部品情報	NPN Transistor

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メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

ホームページ	http://www.pingjingsemi.com/MainEn/Main.aspx

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MMBTSC2412

NPN Transistor

www.pingjingsemi.com

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Revision

：1.0 May-2018

Absolute Maximum Ratings (TA = 25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

60

V

Collector Emitter Voltage

VCEO

50

V

Emitter Base Voltage

VEBO

7

V

Collector Current

IC

150

mA

Power Dissipation

PD

200

mW

Junction Temperature

TJ

150

O

C

Storage Temperature Range

TSTG

- 55 to + 150

O

C

Features



For general purpose application.



According to its DC current gain, the transistor is

subdivided into three groups Q, R and S.

1.Base 2.Emitter 3.Collector

Marking: Q :1Q

R :1B

S :1C

SOT-23

(TO-236)

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