MMBTSC2412 datasheet(2/4 Pages) PJSEMI

部品番号	MMBTSC2412

部品情報	NPN Transistor

PDF	4 Pages

Scroll/Zoom	100%

メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

ホームページ	http://www.pingjingsemi.com/MainEn/Main.aspx

Logo

2 / 4 page

MMBTSC2412

NPN Transistor

www.pingjingsemi.com

2 / 4

Revision

：1.0 May-2018

Electrical Characteristics at TA= 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 6 V, IC = 1mA

hFE

120

180

270

390

560

Collector Base Cutoff Current

at VCB = 60 V

ICBO

100

Emitter Base Cutoff Current

at VEB = 7 V

IEBO

100

Collector Base Breakdown Voltage

at IC = 50 µA

V(BR)CBO

Collector Emitter Breakdown Voltage

at IC = 1 mA

V(BR)CEO

Emitter Base Breakdown Voltage

at IE = 50 µA

V(BR)EBO

Collector Emitter Saturation Voltage

at IC = 50 mA, IB = 5 mA

VCE(sat)

0.4

Base Emitter Saturation Voltage

at IC = 50 mA, IB = 5 mA

VBE(sat)

Current Gain Bandwidth Product

at VCE = 12 V, IE = 2 mA, f = 100 MHz

180

MHz

Collector Output Capacitance

at VCE = 12 V, f = 1 MHz

Cob

3.5

MMBTSC2412 データシート(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

MMBTSC2412 データシート(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Html Pages

1 2 3 4

データシートダウンロード