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MPX4100AS データシート(PDF) 5 Page - NXP Semiconductors |
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MPX4100AS データシート(HTML) 5 Page - NXP Semiconductors |
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5 / 13 page ![]() MPX4100A Sensors Freescale Semiconductor 5 Pressure On-chip Temperature Compensation and Calibration Figure 2 illustrates an absolute sensing chip in the basic chip carrier (Case 867). A fluorosilicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the sensor diaphragm. The MPX4100A series pressure sensor operating characteristics, and internal reliability and qualification tests are based on use of dry air as the pressure media. Media, other than dry air, may have adverse effects on sensor performance and long-term reliability. Contact the factory for information regarding media compatibility in your application. Figure 3 shows the recommended decoupling circuit for interfacing the output of the integrated sensor to the A/D input of a microprocessor or microcontroller. Proper decoupling of the power supply is recommended. Figure 4 shows the sensor output signal relative to pressure input. Typical, minimum, and maximum output curves are shown for operation over a temperature range of 0 ° to 85°C using the decoupling circuit shown in Figure 3. (The output will saturate outside of the specified pressure range.) Figure 2. Cross-Sectional Diagram (not to scale) Figure 3. Recommended Power Supply Decoupling and Output Filtering (For output filtering recommendations, refer to Application Note AN1646.) Figure 4. Output versus Absolute Pressure Absolute Element P2 Lead Frame Wire Bond Fluoro Silicone Gel Die Coat Bond Die Epoxy Plastic Case Stainless Steel Metal Cover +5 V 1.0 μF 0.01 μF 470 pF GND Vs Vout IPS Output Transfer Function: VOUT = VS* (.01059*P-0.1518) ± Error VS = 5.1 Vdc Pressure (ref. to sealed vacuum) in kPa MAX TYP MIN 5.0 4.5 3.5 4.0 3.0 2.5 2.0 1.5 1.0 0 0.5 TEMP = 0 to 85°C 20 kPa to 105 kPa MPX4100A |
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