 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
M58LT128GS データシート(PDF) 48 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
M58LT128GS データシート(HTML) 48 Page - STMicroelectronics |
|
|
48 / 98 page  9 Program and Erase times and Endurance cycles M58LT128GST, M58LT128GSB 48/98 Erase Parameter Block (16 KWord) 0.4 2.5 s Main Block (64 KWord) 1 4 s Program(3) Single Cell Word Program 30 60 µs Single Word Word Program 85 170 µs Buffer Enhanced Factory Program(4) 10 µs Buffer (32 Words) Buffer Program 340 680 µs Buffer Enhanced Factory Program 320 µs Main Block (64 KWords) Buffer Program 640 ms Buffer Enhanced Factory Program 640 ms Bank (16 Mbits) Buffer Program 10 s Buffer Enhanced Factory Program 10 s Program/Erase Cycles (per Block) Main Blocks 1000 cycles Parameter Blocks 2500 cycles 1. TA = –25 to 85°C; VDD = 1.7V to 2V; VDDQ = 2.7 to 3.6V. 2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution). 3. Excludes the time needed to execute the command sequence. 4. This is an average value on the entire device. Parameter Condition(1)(2) Min Typ Typical after 100kW/E Cycles Max Unit |
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか？ [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Japanese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
