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M45PE40-VMP6 データシート(PDF) 11 Page - STMicroelectronics |
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M45PE40-VMP6 データシート(HTML) 11 Page - STMicroelectronics |
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11 / 35 page  11/35 M45PE40 INSTRUCTIONS All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select (S) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first, on Serial Data Input (D), each bit being latched on the rising edges of Serial Clock (C). The instruction set is listed in Table 4.. Every instruction sequence starts with a one-byte instruction code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by both or none. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read) or Read Status Register (RDSR) instruction, the shifted-in instruction sequence is followed by a data-out se- quence. Chip Select (S) can be driven High after any bit of the data-out sequence is being shifted out. In the case of a Page Write (PW), Page Program (PP), Page Erase (PE), Sector Erase (SE), Write Enable (WREN), Write Disable (WRDI), Deep Power-down (DP) or Release from Deep Power- down (RDP) instruction, Chip Select (S) must be driven High exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. That is, Chip Select (S) must driven High when the number of clock pulses after Chip Select (S) being driven Low is an exact multiple of eight. All attempts to access the memory array during a Write cycle, Program cycle or Erase cycle are ig- nored, and the internal Write cycle, Program cycle or Erase cycle continues unaffected. Table 4. Instruction Set Instruction Description One-byte Instruction Code Address Bytes Dummy Bytes Data Bytes WREN Write Enable 0000 0110 06h 0 0 0 WRDI Write Disable 0000 0100 04h 0 0 0 RDID Read Identification 1001 1111 9Fh 0 0 1 to 3 RDSR Read Status Register 0000 0101 05h 0 0 1 to ∞ READ Read Data Bytes 0000 0011 03h 3 0 1 to ∞ FAST_READ Read Data Bytes at Higher Speed 0000 1011 0Bh 3 1 1 to ∞ PW Page Write 0000 1010 0Ah 3 0 1 to 256 PP Page Program 0000 0010 02h 3 0 1 to 256 PE Page Erase 1101 1011 DBh 3 0 0 SE Sector Erase 1101 1000 D8h 3 0 0 DP Deep Power-down 1011 1001 B9h 0 0 0 RDP Release from Deep Power-down 1010 1011 ABh 0 0 0 |
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