FPD4000AF datasheet(1/9 Pages) FILTRONIC

部品番号	FPD4000AF

部品情報	4W PACKAGED POWER PHEMT

PDF	9 Pages

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メーカー	FILTRONIC [Filtronic Compound Semiconductors]

ホームページ	http://www.filtronic.co.uk/

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PRELIMINARY

FPD4000AF

4W PACKAGED POWER PHEMT

Phone: +1 408 850-5790

http:// www.filcs.com

Revised: 08/09/04

Fax: +1 408 850-5766

Email: sales@filcsi.com

•

PERFORMANCE (1.8 GHz)

♦ 36.5 dBm Output Power (P1dB)

♦ 10.5 dB Power Gain (G1dB)

♦ 49 dBm Output IP3

♦ 10V Operation

♦ 45% Power-Added Efficiency

♦ Evaluation Boards Available

♦ Additional Design Data Available on Website

♦ Usable Gain to 4GHz

•

DESCRIPTION AND APPLICATIONS

The FPD4000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-

mount package has been optimized for low electrical parasitics and optimal heatsinking.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter

amplifiers, as well as other power applications in WLL/WLAN amplifiers.

•

ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL

Power at 1dB Gain Compression

P1dB

VDS = 10V; IDQ = 720 mA

ΓS and ΓL tuned for Optimum IP3

35.5

36.5

dBm

Power Gain at dB Gain Compression

G1dB

VDS = 10V; IDQ = 720 mA

ΓS and ΓL tuned for Optimum IP3

9.5

10.5

Maximum Stable Gain

S21/S12

MSG

VDS = 10 V; IDQ = 720 mA

PIN = 0dBm, 50Ω system

19

dB

Power-Added Efficiency

at 1dB Gain Compression

PAE

VDS = 10V; IDQ = 720 mA

ΓS and ΓL tuned for Optimum IP3

45

%

3rd-Order Intermodulation Distortion

IP3

VDS = 10V; IDQ = 720 mA

ΓS and ΓL tuned for Optimum IP3

POUT = 25.5 dBm (single-tone level)

-47

-44

dBc

Saturated Drain-Source Current

IDSS

VDS = 1.3 V; VGS = 0 V

1.9

2.3

2.65

A

Maximum Drain-Source Current

IMAX

VDS = 1.3 V; VGS ≅ +1 V

3.6

A

Transconductance

GM

VDS = 1.3 V; VGS = 0 V

2.4

S

Gate-Source Leakage Current

IGSO

VGS = -3 V

70

170

µA

Pinch-Off Voltage

|VP|

VDS = 1.3 V; IDS = 8 mA

0.7

0.9

1.4

V

Gate-Source Breakdown Voltage

|VBDGS|

IGS = 8 mA

6

8

V

Gate-Drain Breakdown Voltage

|VBDGD|

IGD = 8 mA

20

22

V

Thermal Resistivity (channel-to-case)

ΘCC

See Note on following page

12

°C/W

SEE PACKAGE

OUTLINE FOR

MARKING CODE

同様の部品番号 - FPD4000AF

メーカー	部品番号	データシート	部品情報
Filtronic Compound Semi...	FPD4000AS	197Kb / 3P	2.5W PACKAGED POWER PHEMT

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同様の説明 - FPD4000AF

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