LN2306ELT1G datasheet(2/5 Pages) LRC

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LN2306ELT1G

N-Channel 30V(D-S) MOSFET

6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

OFF CHARACTERISTICS

Characteristic

Drain–Source Breakdown Voltage

(VGS = 0, ID = 250μA)

Zero Gate Voltage Drain Current

(VDS=30V, VGS=0V)

Gate–Body Leakage Current, Forward

(VDS = 0 V, VGS = 10 V)

Gate–Body Leakage Current, Reverse

(VDS = 0 V, VGS = -10 V)

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

(VDS = VGS, ID = 250μA)

Static Drain–Source On–State Resistance

(VGS = 10 V, ID =3.4 A)

(VGS = 4.5 V, ID =2.7 A)

(VGS = 2.5 V, ID = 1 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= 15 V)

Output Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= 15 V)

Reverse Transfer Capacitance

(VGS = 0 V, f = 1.0MHz,VDS= 15 V)

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward Voltage

(VGS = 0 V, ISD = 3.4 A)

3.Pulse Test: Pulse Width ≤

300 μs, Duty Cycle ≤2.0%.

Symbol

Min.

Unit

td(on)

RDS(on)

0.6

105

(VDD = 15V, RL = 15Ω

ΙD = 1Α, VGEN = 10V,RG

= 6Ω)

2600

677

97.2

Typ.

Max.

IGSSR

μA

Ciss

247

Coss

Crss

V(BR)DSS

IDSS

IGSSF

Ω

-10

VSD

1.2

VGS(th)

1.4

128

td(off)

Leshan Radio Company, LTD.

2/5

μA

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

(VGS = 4.5 V, ID=2.1A,

VDS= 15 V)

4.7

1.9

1.6

Qgs

Qgd

(VGS = 1.7 V, ID = 0.5 A)

400

180

Rev.D Jun. 2019

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