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AP01C データシート(PDF) 1 Page - EIC discrete Semiconductors |
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AP01C データシート(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() AP01C FAST RECOVERY RECTIFIER DIODE PRV : 1000 Volts Io : 0.2 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL VALUE UNIT Maximum Peak Reverse Voltage VRM 1000V Maximum Peak Reverse Surge Voltage VRSM 1050V Maximum Average Forward Current IF(AV) 0.2A Maximum Peak Forward Surge Current ( 50 Hz, Half-cycle, Sine wave, Single Shot ) Maximum Forward Voltage at IF = 0.2 A VF 4V Maximum Reverse Current at VR = VRM Ta = 25 °C IR 100 µA Maximum Reverse Current at VR = VRM Ta = 100 °C IR(H) 500 µA Maximum Reverse Recovery Time ( Note 1 ) Trr 200 µs Junction Temperature Range TJ - 40 to + 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Note: ( 1 ) Reverse Recovery Test Conditions : IF = 100 mA, IRP = 100 mA. Page 1 of 2 Rev. 02 : March 25, 2005 RATING IFSM 5A DO - 41 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) * Pb / RoHS Free IATF 0113686 SGS TH07/1033 TH09/2479 TH97/2478 www.eicsemi.com |
同様の部品番号 - AP01C |
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同様の説明 - AP01C |
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