PJM138NSA datasheet(2/6 Pages) PJSEMI

部品番号	PJM138NSA

部品情報	N- Enhancement Mode Field Effect Transistor

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メーカー	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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Electrical Characteristics (TA=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Units

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID=250µA

Drain to Source Leakage Current

IDSS

VDS =50V, VGS= 0V

0.5

µA

VDS =30V, VGS= 0V

100

Gate-body leakage current

IGSS

VGS =±20V,VDS = 0V

±10

µA

Gate threshold voltage Note1

VGS(th)

VDS =VGS, ID =250µA

0.6

1.4

Drain-source on-resistance Note1

RDS(on)

VGS =10V, ID =0.22A

3.5

Ω

VGS =4.5V, ID =0.22A

1.1

Ω

Forward tranconductance Note1

gFS

VDS =10V, ID =0.22A

0.13

Dynamic characteristics

Input Capacitance

Ciss

VDS =25V,VGS =0V,f=1MHz

26.5

Output Capacitance

Coss

12.9

Reverse Transfer Capacitance

Crss

5.9

Switching Characteristics

Turn-on delay time

td(on)

VGS=10V,VDD=30V,ID=0.29A

,RGEN =6Ω,

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Source-Drain Diode characteristics

Diode Forward voltage Note1

VSD

VGS =0V, IS=0.44A

1.4

Notes :

1. Pulse test : pulse width≤300μs, duty cycle≤2%.

PJM138NSA

N- Enhancement Mode Field Effect Transistor

www.pingjingsemi.com

Revision：2.0 Jan-2019

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