PWD13F60TR datasheet(10/26 Pages) STMICROELECTRONICS

10 / 26 page

Device characterization values

PWD13F60

10/26

DocID030865 Rev 2

Device characterization values

Table 7, Table 8 and electrical characteristics curves (from Figure 4 to Figure 12) contained

in this section represent typical values based on characterization and simulation results.

Table 7. Power MOSFET

Symbol

Parameter

Test condition

Min. Typ. Max. Unit

MOSFET dynamic

Total gate charge

VGS = 10 V, TJ = 25 °C

VDS = 480 V, ID = 3 A

-26

Source-drain diode

trr

Diode reverse recovery time

ISD = 3 A,

VS = 100 V,

di/dt = 100 A/µs, TJ = 25 °C

-93

Qrr

Diode reverse recovery charge

376

IRRM

Diode reverse recovery current

8.1

Table 8. Inductive load switching characteristics

Symbol

Parameter

Test condition

Min. Typ. Max. Unit

t(on)(1)

Turn-on time

VS = 300 V,

VCC = VBO = 15 V,

IOUT = 3 A, TJ = 25 °C,

see Figure 3

-280

tC(on)(2)

Crossover time (on)

t(off)(1)

Turn-off time

360

tC(off)(2)

Crossover time (off)

105

Eon

Turn-on switching losses

115

µJ

Eoff

Turn-off switching losses

µJ

Suggested minimum dead time

270

t(on) and t(off) include the propagation delay time of the internal driver.

tC(on) and tC(off) are the switching times of the MOSFET itself under the internally given gate driving conditions.

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