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PJM35N30DI データシート(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

部品番号 PJM35N30DI
部品情報  N-Channel Power MOSFET
PDF  4 Pages
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メーカー  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
ホームページ  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM35N30DI データシート(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM35N30DI
N-Channel Power MOSFET
www.pingjingsemi.com
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Revision：1.0 Dec-2018
Absolute Maximum Ratings
Ratings at TC =25℃ unless otherwise specified.
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
35
A
Pulsed Drain Current Note1
IDM
120
A
Power Dissipation
PD
35
W
Junction and Storage Temperature Range
TJ, TSTG
150, -55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ.
Units
Maximum Junction-to-Case Note2
RθJC
3.6
°C/W
RDS(ON) =
4.7mΩ @ VGS=10V (Typ.)
High density cell design for ultra low RDS(on)
Fully characterized avalanche voltage and current
DFN3.3X3.3-8L
Schematic Diagram
Features
Applications
⚫
Power switching application
⚫
Hard switched and high frequency circuits
⚫
Uninterruptible power supply
S
S
S
G
D
D
D
D
1
2
Gate
Source
3Drain


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