2SA3906SQ datasheet(2/4 Pages) PJSEMI

2 / 4 page

2SA3906SQ

PNP Transistor

2 / 4

www.pingjingsemi.com

Revision：1.0 Qct-2018

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Min.

Symbol

Max.

Unit

DC Current Gain

at -VCE = 1 V, -IC = 0.1 mA

at -VCE = 1 V, -IC = 1 mA

at -VCE = 1 V, -IC = 10 mA

at -VCE = 1 V, -IC = 50 mA

at -VCE = 1 V, -IC = 100 mA

hFE

100

300

Collector Base Cutoff Current

at -VCB = 30 V

-ICBO

Emitter Base Cutoff Current

at -VEB = 6 V

-IEBO

Collector Base Breakdown Voltage

at -IC = 10 µA

-V(BR)CBO

Collector Emitter Breakdown Voltage

at -IC = 1 mA

-V(BR)CEO

Emitter Base Breakdown Voltage

at -IE = 10 µA

-V(BR)EBO

Collector Emitter Saturation Voltage

at -IC = 10 mA, -IB = 1 mA

at -IC = 50 mA, -IB = 5 mA

-VCE(sat)

0.25

0.4

Base Emitter Saturation Voltage

at -IC = 10 mA, -IB = 1 mA

at -IC = 50 mA, -IB = 5 mA

-VBE(sat)

0.85

0.95

Gain Bandwidth Product

at -VCE = 20 V, -IC = 10 mA, f = 100 MHz

250

MHz

Collector Base Capacitance

at -VCB = 5 V, f = 100 KHz

Cob

4.5

Delay Time

at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA

Rise Time

at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA

Storage Time

at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA

225

Fall Time

at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA

2SA3906SQ データシート(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

2SA3906SQ データシート(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Html Pages

1 2 3 4

データシートダウンロード