WST2007 datasheet(1/5 Pages) WIINSOK

部品番号	WST2007

部品情報	DUAL N-Channel MOSFET

PDF	5 Pages

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メーカー	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

ホームページ	http://www.winsok.tw/index.html

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1 / 5 page

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Sou

rce Voltage

±

8

V

ID@TA=25℃

Continuous Drain Current, VGS @ 4.5V

1

1.4

A

ID@TA=70℃

Continuous Drain Current, VGS @ 4.5V

1

1.1

A

IDM

Pulsed Drain Current

2

7.2

A

PD@TA=25℃

Total Power Dissipation

3

0.33

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-ambient

1

---

375

℃

/W

RθJC

Thermal Resistance Junction-Case

1

---

240

℃

/W

BVDSS

RDSON

ID

20V

140mΩ

1.4 A

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent Cdv/dt effect decline

Green Device Available

General Description

Features

Applications

High Frequency Point-of-Load Synchronous

Small power switching for MB/NB/UMPC/VGA

Networking DC-DC Power System

Load Switch

Absolute Maximum Ratings

Thermal Data

SOT

-363 Pin Configuration

Product Summery

The WST2007 is the highest performance trench

P-ch MOSFET with extreme high cell density ,

which provide excellent RDSON and gate charge

for most of the small power switching and load

switch applications.

The WST2007 meet the RoHS and Green Product

requirement with full function reliability approved.

WST2007

DUAL N-Channel MOSFET

www.winsok.tw

Page 1

Dec.2014

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