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WST2007 データシート(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

部品番号 WST2007
部品情報  DUAL N-Channel MOSFET
PDF  5 Pages
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メーカー  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
ホームページ  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST2007 データシート(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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30
---
---
204
---
---
43.6
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.02
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V , ID=1.5A
---
140
450
m
Ω
VGS=2.5V , ID=1A
---
180
765
VGS=1.8V , ID=0.8A
270
850
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.3
0.6
1
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-2.5
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
1A
---
6
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2
4
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=
1A
---
3.3
4.6
nC
Qgs
Gate-Source Charge
---
0.51
0.7
Qgd
Gate-Drain Charge
---
0.88
1.2
Td(on)
Turn-On Delay Time
VDD=10V , VGS=4.5V ,
RG=3.3Ω ID=
1A
---
2
4.0
ns
Tr
Rise Time
---
29.2
53
Td(off)
Turn-Off Delay Time
---
10
20
Tf
Fall Time
---
6.8
13.6
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
1.4
A
ISM
Pulsed Source Current
2,4
---
---
7.2
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=2A , dI/dt=100A/µs , TJ=25℃
---
3.9
---
nS
Qrr
Reverse Recovery Charge
---
1.04
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WST2007
DUAL N-Channel MOSFET
www.winsok.tw
Page 2
Dec.2014
m
Ω
---



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