UT4466G-S08-R datasheet(1/6 Pages) DOINGTER

部品番号	UT4466G-S08-R

部品情報	N-Channel MOSFET uses advanced trench technology

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メーカー	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

ホームページ	http://www.doingter.cn/

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=30V,ID= A,RDS(ON)<2 mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current – Continuous (TC=25℃ )

A

IDM

Drain Current – Pulsed

30

PD

Power Dissipation

2

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +175

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

---

℃/W

RƟJA

Thermal Resistance,Junction to Ambient

**

62.5

3

G

D

S

9

UT4466G-S08-R

同様の部品番号 - UT4466G-S08-R

メーカー	部品番号	データシート	部品情報
Unisonic Technologies	UT4466G-S08-R	195Kb / 6P	10A, 30V N-CHANNEL ENHANCEMENT MODE MOSFET

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