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UT4466G-S08-R データシート(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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UT4466G-S08-R データシート(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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2 / 6 page ![]() www.doingter.cn — 2 — Electrical Characteristics:(T C=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Drain-Source Leakage Current VDS=150V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics 3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 2.4 V RDS(ON) Static Drain-Source On Resistance VGS=10V,ID=7A --- 20 mΩ VGS=4.5V,ID=5A 30 42 GFS Forward Transconductance VDS=5V, ID=7A 3 10 --- S Dynamic Characteristics 4 Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 540 --- pF Coss Output Capacitance --- 83 --- Crss Reverse Transfer Capacitance --- 63 --- Switching Characteristics 4 td(on) Turn-On Delay Time --- 10 --- ns tr Rise Time --- 4 --- ns td(off) Turn-Off Delay Time --- 27 --- ns tf Fall Time --- 5 --- ns Qg Total Gate Charge VGS=5V, VDS=10V, ID=7A --- 13 --- nC Qgs Gate-Source Charge --- 1.3 --- nC Qgd Gate-Drain “Miller” Charge --- 4.6 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage 1 VGS=0V,IS=30A,TJ=25℃ --- 1.2 V ISD Continuous Source Current --- --- --- 2 A VDD=15V,ID=7A,RL=15Ω VGS=10V,RG=2.5Ω 3 2 UT4466G-S08-R |
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