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ADP5065ACBZ-1-R7 データシート(PDF) 7 Page - Analog Devices |
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ADP5065ACBZ-1-R7 データシート(HTML) 7 Page - Analog Devices |
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7 / 40 page ![]() Data Sheet ADP5065 Rev. D | Page 7 of 40 ABSOLUTE MAXIMUM RATINGS Table 4. Parameter Rating VIN1, VIN2 to PGND1, PGND2 −0.5 V to +20 V All Other Pins to AGND −0.3 V to +6 V Continuous Drain Current, Battery Supple- mentary Mode, from ISO_Bx to ISO_Sx TJ ≤ 85°C 2.2 A TJ = 125°C 1.1 A Storage Temperature Range −65°C to +150°C Operating Junction Temperature Range −40°C to +125°C Soldering Conditions JEDEC J-STD-020 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 5. Thermal Resistance Package Type θJA θJC θJB Unit 20-Lead WLCSP1 46.8 0.7 9.2 °C/W 1 5 × 4 array, 0.5 mm pitch (2.75 mm × 2.08 mm); based on a JEDEC, 2S2P, 4-layer board with 0 m/sec airflow. Maximum Power Dissipation The maximum safe power dissipation in the ADP5065 package is limited by the associated rise in junction temperature (TJ) on the die. At approximately 150°C, which is the glass transition temperature, the plastic changes its properties. Even temporarily exceeding this temperature limit may change the stresses that the package exerts on the die, permanently shifting the para- metric performance of the ADP5065. Exceeding a junction temperature of 175°C for an extended period of time can result in changes in the silicon devices that potentially cause failure. ESD CAUTION |
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