The following table lists the dynamic characteristics (per SiC MOSFET) of the MSCSM170AM039CT6AG device.

Table 1-3. Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input capacitance

f = 1 MHz

—

29.7

—

nF

Output capacitance

—

1.3

—

Reverse transfer

capacitance

—

0.09

—

Total gate charge

—

1602

—

nC

Gate-source charge

—

441

—

Gate-drain charge

—

243

—

Turn-on delay time

—

75

—

ns

Rise time

—

75

—

Turn-off delay time

—

153

—

Fall time

56

—

Turn-on energy

—

20.3

—

mJ

Turn-off energy

—

10.8

—

Internal gate resistance

—

0.65

—

Ω

Junction-to-case thermal resistance

—

—

0.063

°C/W

The following table lists the body diode ratings and characteristics (per SiC MOSFET) of the

MSCSM170AM039CT6AG device.

Table 1-4. Body Diode Ratings and Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Diode forward voltage

—

3.7

—

V

—

3.9

—

Reverse recovery time

—

27

—

ns

Reverse recovery charge

—

5.9

—

µC

Reverse recovery current

—

414

—

A

MSCSM170AM039CT6AG

Electrical Specifications

Datasheet

DS00003969A-page 4