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STM8L052C6 データシート(PDF) 59 Page - STMicroelectronics |
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STM8L052C6 データシート(HTML) 59 Page - STMicroelectronics |
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59 / 103 page ![]() DocID023331 Rev 2 59/103 STM8L052C6 Electrical parameters 97 Figure 8. Typ. IDD(RUN) vs. VDD, fCPU = 16 MHz 1. Typical current consumption measured with code executed from RAM 4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 28. 5. Tested in production. 6. The run from Flash consumption can be approximated with the linear formula: IDD(run_from_Flash) = Freq * 195 µA/MHz + 440 µA 7. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 29. |
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