STM8S103F2 datasheet(84/121 Pages) STMICROELECTRONICS

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Electrical characteristics

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DocID15441 Rev 14

Figure 43. ADC accuracy characteristics

1. Example of an actual transfer curve

2. The ideal transfer curve

3. End point correlation line

ET = Total unadjusted error: maximum deviation between the actual and the ideal transfer curves.

EO = Offset error: deviation between the first actual transition and the first ideal one.

EG = Gain error: deviation between the last ideal transition and the last actual one.

ED = Differential linearity error: maximum deviation between actual steps and the ideal one.

EL = Integral linearity error: maximum deviation between any actual transition and the end point correlation

line.

Table 47. ADC accuracy with RAIN< 10 kΩ, VDD= 3.3 V

Symbol

Parameter

Conditions

Typ

Max(1)

1. Guaranteed by characterization results.

Unit

|ET|

Total unadjusted error(2)

2. ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins

should be avoided as this significantly reduces the accuracy of the conversion being performed on another

analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may

potentially inject negative current. Any positive injection current within the limits specified for IINJ(PIN) and

ΣIINJ(PIN) in Section 10.3.6 does not affect the ADC accuracy.

fADC = 2 MHz

1.6

3.5

LSB

fADC = 4 MHz

1.9

|EO|

Offset error(2)

fADC = 2 MHz

12.5

fADC = 4 MHz

1.5

2.5

|EG|

Gain error(2)

fADC = 2 MHz

1.3

fADC = 4 MHz

|ED|

Differential linearity error(2)

fADC = 2 MHz

0.7

1.0

fADC = 4 MHz

0.7

1.5

|EL|

Integral linearity error(2)

fADC = 2 MHz

0.6

1.5

fADC = 4 MHz

0.8

1LSBIDEAL

VDD VSS

–

1024

--------------------------------

1023

1022

1021

234

567

1021102210231024

(1)

(2)

(3)

VDD

VSS

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