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STM32WB50CG データシート(PDF) 71 Page - STMicroelectronics

部品番号 STM32WB50CG
部品情報  Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4 with FPU, Bluetooth® 5.2 or 802.15.4 radio solution
PDF  119 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32WB50CG データシート(HTML) 71 Page - STMicroelectronics

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DS13047 Rev 5
71/119
STM32WB50CG STM32WB30CE
Electrical characteristics
110
Table 40. Current consumption in Standby mode
Symbol
Parameter
Conditions
TYP
MAX(1)
Unit
-VDD 0 °C 25 °C 40 °C 55 °C 85 °C 0 °C 25 °C 85 °C
IDD
(Standby)
Supply
current in
Standbymode
(backup
registers and
SRAM2a
retained),
RTC disabled
BLE disabled
No independent
watchdog
2.4 V 0.270 0.350 0.540 0.955 3.50
-
-
-
µA
3.0 V 0.270 0.370 0.575 1.00
3.85 0.380 0.945 8.505
3.6 V 0.300 0.410 0.645 1.15
4.20 0.400 1.040 8.980
BLE disabled
With
independent
watchdog
2.4 V 0.280 0.595 0.790 1.20
4.00
-
-
-
3.0 V 0.290 0.670 0.855 1.35
4.15 0.730 1.253 8.774
3.6 V 0.295 0.770 0.990 1.50
4.60 0.851 1.356 9.360
IDD
(Standby with
RTC)
Supply
current in
Standbymode
(backup
registers and
SRAM2a
retained),
RTC enabled
BLE disabled
RTC clocked by
LSI, no
independent
watchdog
2.4 V 0.630 0.705 0.910 1.30
3.80
-
-
-
3.0 V 0.725 0.825 1.050 1.50
3.95 0.930 1.463 8.977
3.6 V 0.860 0.970 1.200 1.70
4.25 1.050 1.628 9.634
RTC clocked by
LSI, with
independent
watchdog
2.4 V 0.635 0.790 0.975 1.40
4.10
-
-
-
3.0 V 0.725 0.915 1.100 1.55
4.50 1.028 1.573 9.072
3.6 V 0.870 1.050 1.300 1.80
4.90 1.144 1.723 9.730
RTC clocked by
LSE quartz (2) in
low drive mode
2.4 V 0.665 0.755 0.960 1.35
4.05
-
-
-
3.0 V 0.775 0.880 1.100 1.55
4.40 0.600 1.100 8.719
3.6 V 0.935 1.050 1.300 1.80
5.00 0.750 1.171 9.460
IDD
(SRAM2a)(3)
Supply
current to be
subtracted in
Standbymode
when
SRAM2a is
not retained
-
2.4 V 0.165 0.245 0.375 0.650 2.15
-
-
-
µA
3.0 V 0.155 0.250 0.385 0.630 2.25
-
-
-
3.6 V 0.155 0.235 0.375 0.670 2.20
-
-
-
IDD
(wakeup from
Standby)
Supply
current during
wakeup from
Standbymode
Wakeup clock is
HSI16. See (4).
3.0 V
-
1.73
-
-
-
-
-
-
mA
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF
loading capacitors.
3. The supply current in Standby with SRAM2a mode is: IDD(Standby) + IDD(SRAM2a). The supply current in Standby with
RTC with SRAM2a mode is: IDD(Standby + RTC) + IDD(SRAM2a).
4. Wakeup with code execution from Flash memory. Average value given for a typical wakeup time as specified in Table 45.



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