BLF978P

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© Ampleon Netherlands B.V. 2020. All rights reserved.

Product data sheet

Rev. 1 — 3 April 2020

3 of 15

BLF978P

HF / VHF power LDMOS transistor

6.

Characteristics

(1)

 = 1 %

(2)

 = 2 %

(3)

 = 5 %

(4)

 = 10 %

(5)

 = 20 %

(6)

 = 50 %

(7)

 = 100 % (DC)

Fig 1.

Transient thermal impedance from junction to case as a function of pulse

duration

amp01281

1

10

0

0.04

0.08

0.12

0.16

0.2

th(j-c)

(K/W)

(K/W)

(K/W)

(7)

(7)

(7)

(6)

(6)

(6)

(5)

(5)

(5)

(4)

(4)

(4)

(3)

(3)

(3)

(2)

(2)

(2)

(1)

(1)

(1)

Table 6.

DC characteristics

Symbol Parameter

Conditions

Min

Typ

Max Unit

108

--V

gate-source threshold voltage

1.5

2.0

2.5

V

drain leakage current

--2.8

A

drain cut-off current

54

71.7 -

A

gate leakage current

-

-

280

nA

-54

-

m



Table 7.

AC characteristics

Symbol

Parameter

Conditions

Min Typ

Max Unit

feedback capacitance

-

1.45

-

pF

input capacitance

-

392

-

pF

output capacitance

-

115

-

pF