BLF978P datasheet(2/15 Pages) AMPLEON

2 / 15 page

BLF978P

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Product data sheet

Rev. 1 — 3 April 2020

2 of 15

BLF978P

HF / VHF power LDMOS transistor

Pinning information

[1]

Connected to flange.

Ordering information

Limiting values

[1]

Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF

calculator.

Thermal characteristics

[1]

Rth(j-c) is measured under RF conditions.

[2]

See Figure 1.

Table 2.

Pinning

Description

Simplified outline

Graphic symbol

1drain1

2drain2

3gate1

4gate2

5source

[1]

sym117

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLF978P

flanged balanced ceramic package; 2 mounting holes;

4 leads

SOT539A

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

108

VGS

gate-source voltage

6+11

Tstg

storage temperature

65

+150

C

junction temperature

[1] -

225

C

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

Rth(j-c)

thermal resistance from junction to case

Tcase =90 C

[1] 0.121 K/W

Zth(j-c)

transient thermal impedance from

junction to case

Tcase =90 C; tp =100 s;

 =10 %

[2] 0.033 K/W

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