LL4151 datasheet(2/4 Pages) VISHAY

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LL4151

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Vishay Semiconductors

Rev. 1.9, 25-Feb-2020

Document Number: 85559

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Reverse Current vs. Junction Temperature

Fig. 2 - Forward Current vs. Forward Voltage

Fig. 3 - Diode Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 50 mA

0.880

Reverse current

VR = 50 V

VR = 50 V, Tj = 150 °C

μA

Breakdown voltage

IR = 5 μA, tp/T = 0.01,

tp = 0.3 ms

V(BR)

Diode capacitance

VR = 0, f = 1 MHz,

VHF = 50 mV

2pF

Reverse recovery time

IF = IR = 10 mA,

iR = 1 mA

trr

4ns

IF = 10 mA, VR = 6 V,

iR = 0.1 x IR, RL = 100

trr

2ns

120

160

0.01

0.1

100

Tj - Junction Temperature (°C)

200

94 9151

VR =50V

Scattering Limit

0.4

0.8

1.2

1.6

0.1

100

1000

V - Forward Voltage (V)

2.0

94 9152

T = 25 °C

T = 100 °C

0.1

0.5

1.0

1.5

2.0

3.0

VR - Reverse Voltage (V)

100

94 9153

2.5

f=1MHz

Tj = 25 °C

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